晶体管类型:1个NPN-预偏置
集射极击穿电压(Vceo):50V
集电极电流(Ic):100mA
功率:200mW
直流增益(hFE@Ic,Vce):68@5mA,5V
最小输入电压(VI(on)):2.5V@2mA,0.3V
最大输入电压(VI(off)):300mV@100μA,5V
输出电压(VO(on)):300mV@10mA,0.5mA
输入电阻:47kΩ
电阻比:1
encap:SOT-23(TO-236)
晶体管类型:1个NPN-预偏置
集射极击穿电压(Vceo):50V
集电极电流(Ic):100mA
功率:200mW
直流增益(hFE@Ic,Vce):68@5mA,5V
最小输入电压(VI(on)):2.5V@2mA,0.3V
最大输入电压(VI(off)):300mV@100μA,5V
输出电压(VO(on)):300mV@10mA,0.5mA
输入电阻:47kΩ
电阻比:1
encap:SOT-23(TO-236)





